| PART |
Description |
Maker |
| 2SD1664 2SD1858 A5800362 2SD1664P 2SD1664T100Q 2SD |
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
Medium Power Transistor (32V/ 1A)
Medium Power Transistor (32V, 1A)
From old datasheet system
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Littelfuse
Rohm CO.,LTD.
ROHM[Rohm]
|
| 2SD166409 |
Medium Power Transistor (32V, 1A)
|
Rohm
|
| 2SD16641 2SD1858 2SD1664 |
Medium Power Transistor (32V, 1A)
|
ROHM[Rohm]
|
| 2SB1240 2SB1182 |
Medium power transistor (-32V, -2A)
|
Rohm
|
| 2SB118809 2SB1188 2SB1188T100Q |
Medium power transistor (-32V, -2A)
Medium power transistor (32V, 2A)
Medium power transistor (?2V, ?A)
|
Rohm
Littelfuse
|
| MP6T1 |
Medium Power Transistor (−32V, −1A)
|
Rohm
|
| 2SC2411K 2SC2411KT146Q |
Medium Power Transistor (32V, 0.5A)
|
Rohm
|
| WPT2N40B WPT2N40-8TR |
PNP, -32V, -1A, Power Transistor with 20V N-MOSFET
|
TY Semiconductor Co., Ltd
TY Semiconductor Co., L...
|
| T2G4003532-FS-15 |
30W, 32V DC 3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T1G4003532-FL-15 T1G4003532-FS T1G4003532-FL-EVB1 |
35W, 32V, DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
